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- Manufacturer No：SUP90N04-3M3P-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SUP90N04-3M3P-GE3
- SKU：356522
- Description：MOSFET N-CH 40V 90A TO-220AB
User Guide
User Guide
SUP90N04-3M3P-GE3 Details
MOSFET N-CH 40V 90A TO-220AB
SUP90N04-3M3P-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Packaging: Bulk
- Mount: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Pins: 3
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 40V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code: TO-220AB
- Fall Time (Typ): 7 ns
- Turn-Off Delay Time: 45 ns
- Turn On Delay Time: 11 ns
- Series: TrenchFET?
- Power Dissipation: 3.1W
- Power Dissipation-Max: 3.1W Ta 125W Tc
- Rds On (Max) @ Id, Vgs: 3.3m Ω @ 22A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Position: SINGLE
- Published: 2001
- DS Breakdown Voltage-Min: 40V
- Threshold Voltage: 1V
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Rise Time: 7 ns
- Continuous Drain Current (ID): 90A
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Weight: 6.000006g
- Current - Continuous Drain (Id) @ 25°C: 90A Tc
- Gate Charge (Qg) (Max) @ Vgs: 131nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5286pF @ 20V
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