SUP90N06-5M0P-E3Vishay Siliconix
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    SUP90N06-5M0P-E3123
    • Manufacturer No：
      SUP90N06-5M0P-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      401951
    • Description：
      MOSFET N-CH 60V 90A TO220AB
    • Quantity：
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    Inventory:1
    • Qty Unit Price price
    • 1 $6.118 $6.118
    • 10 $6.057 $60.57
    • 100 $5.997 $599.7
    • 1000 $5.937 $5937
    • 10000 $5.878 $58780

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    SUP90N06-5M0P-E3
    • Manufacturer No：
      SUP90N06-5M0P-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUP90N06-5M0P-E3
    • SKU：
      401951
    • Description：
      MOSFET N-CH 60V 90A TO220AB

    User Guide

    User Guide

    SUP90N06-5M0P-E3 Details

    MOSFET N-CH 60V 90A TO220AB

    SUP90N06-5M0P-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Termination: Through Hole
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Part Status: Obsolete
    • Number of Pins: 3
    • Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier
    • Dual Supply Voltage: 60V
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-220-3
    • JEDEC-95 Code: TO-220AB
    • Fall Time (Typ): 8 ns
    • Series: TrenchFET?
    • Pulsed Drain Current-Max (IDM): 240A
    • Power Dissipation: 3.75W
    • Drain-source On Resistance-Max: 0.005Ohm
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Avalanche Energy Rating (Eas): 245 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Number of Terminations: 3
    • Pin Count: 3
    • Packaging: Strip
    • Published: 2009
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Rise Time: 15ns
    • Continuous Drain Current (ID): 90A
    • Turn On Delay Time: 23 ns
    • Turn-Off Delay Time: 36 ns
    • Vgs(th) (Max) @ Id: 4.5V @ 250μA
    • Current - Continuous Drain (Id) @ 25°C: 90A Tc
    • Rds On (Max) @ Id, Vgs: 5m Ω @ 20A, 10V
    • Power Dissipation-Max: 3.75W Ta 300W Tc
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