VP0808B-E3Vishay Siliconix
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    VP0808B-E3123
    • Manufacturer No：
      VP0808B-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      424814
    • Description：
      MOSFET P-CH 80V 0.88A TO-205
    • Quantity：
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    Inventory:15
    • Qty Unit Price price
    • 1 $92.056 $92.056
    • 10 $91.144 $911.44
    • 100 $90.241 $9024.1
    • 1000 $89.347 $89347
    • 10000 $88.462 $884620

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    VP0808B-E3
    • Manufacturer No：
      VP0808B-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      VP0808B-E3
    • SKU：
      424814
    • Description：
      MOSFET P-CH 80V 0.88A TO-205

    User Guide

    User Guide

    VP0808B-E3 Details

    MOSFET P-CH 80V 0.88A TO-205

    VP0808B-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Pin Count: 2
    • Mount: Through Hole
    • Number of Channels: 1
    • JESD-609 Code: e3
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Terminal Form: WIRE
    • REACH SVHC: Unknown
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Operating Temperature: -55°C~150°C TJ
    • Terminal Finish: MATTE TIN
    • Transistor Application: SWITCHING
    • Drain to Source Voltage (Vdss): 80V
    • Case Connection: DRAIN
    • Drain-source On Resistance-Max: 5Ohm
    • Turn-Off Delay Time: 20 ns
    • Length: 9.4mm
    • Rise Time: 30ns
    • Drain to Source Breakdown Voltage: -80V
    • Continuous Drain Current (ID): -3A
    • Feedback Cap-Max (Crss): 25 pF
    • Drain Current-Max (Abs) (ID): 0.88A
    • Current Rating: -280mA
    • Current - Continuous Drain (Id) @ 25°C: 880mA Ta
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Qualification Status: Not Qualified
    • Factory Lead Time: 9 Weeks
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Terminal Position: BOTTOM
    • Published: 2000
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Height: 6.6mm
    • Fall Time (Typ): 20 ns
    • FET Type: P-Channel
    • Turn On Delay Time: 11 ns
    • Package / Case: TO-205AD, TO-39-3 Metal Can
    • Width: 8.15mm
    • Vgs(th) (Max) @ Id: 4.5V @ 1mA
    • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
    • Rds On (Max) @ Id, Vgs: 5 Ω @ 1A, 10V
    • Power Dissipation-Max: 6.25W Ta
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