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  • Manufacturer No:
    US6M2TR
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    10616398
  • Description:
    MOSFET N/P-CH 30V/20V TUMT6
  • Quantity:
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Inventory:96000
  • Qty Unit Price price
  • 1 $0.316 $0.316
  • 10 $0.312 $3.12
  • 100 $0.308 $30.8
  • 1000 $0.304 $304
  • 10000 $0.3 $3000

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  • Manufacturer No:
    US6M2TR
  • Manufacturer:
    ROHM
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    US6M2TR
  • SKU:
    10616398
  • Description:
    MOSFET N/P-CH 30V/20V TUMT6

US6M2TR Details

MOSFET N/P-CH 30V/20V TUMT6

US6M2TR Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Terminations: 6
  • Pin Count: 6
  • REACH SVHC: No SVHC
  • Peak Reflow Temperature (Cel): 260
  • Max Power Dissipation: 1W
  • Gate to Source Voltage (Vgs): 12V
  • Continuous Drain Current (ID): 1A
  • FET Feature: Standard
  • Published: 2001
  • Packaging: Cut Tape (CT)
  • Threshold Voltage: 1.5V
  • JESD-609 Code: e2
  • Subcategory: Other Transistors
  • Turn-Off Delay Time: 25 ns
  • Package / Case: 6-SMD, Flat Leads
  • Terminal Finish: TIN COPPER
  • FET Type: N and P-Channel
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Drain to Source Voltage (Vdss): 30V 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A 1A
  • Base Part Number: *M2
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Number of Pins: 6
  • Termination: SMD/SMT
  • Factory Lead Time: 16 Weeks
  • Time@Peak Reflow Temperature-Max (s): 10
  • Power Dissipation: 1W
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Dual Supply Voltage: 30V
  • Current Rating: 1.5A
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Operating Temperature: 150°C TJ
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Breakdown Voltage: -20V
  • Nominal Vgs: 1.5 V
  • Resistance: 340mOhm
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
  • Rds On (Max) @ Id, Vgs: 240m Ω @ 1.5A, 4.5V

ROHM — Manufacturer Introduction

ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors. For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values. The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.

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