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- Manufacturer No：IRLML2502TR
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRLML2502TR
- SKU：10984238
- Description：MOSFET N-CH 20V 4.2A SOT-23
User Guide
User Guide
IRLML2502TR Details
MOSFET N-CH 20V 4.2A SOT-23
IRLML2502TR Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- JESD-609 Code: e3
- Number of Terminations: 3
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Operating Temperature (Max): 150°C
- Drain to Source Voltage (Vdss): 20V
- Part Status: Discontinued
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Additional Feature: HIGH RELIABILITY
- Subcategory: FET General Purpose Power
- Power Dissipation-Max (Abs): 1.25W
- Drain Current-Max (Abs) (ID): 4.2A
- JEDEC-95 Code: TO-236AB
- Drain-source On Resistance-Max: 0.045Ohm
- Current - Continuous Drain (Id) @ 25°C: 4.2A Ta
- Rds On (Max) @ Id, Vgs: 45m Ω @ 4.2A, 4.5V
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Surface Mount: YES
- Terminal Position: DUAL
- Qualification Status: Not Qualified
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 20V
- Published: 2003
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- JESD-30 Code: R-PDSO-G3
- Series: HEXFET?
- Pulsed Drain Current-Max (IDM): 33A
- Vgs(th) (Max) @ Id: 1.2V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V
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Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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