Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
- 1 $50.516 $50.516
- 10 $50.015 $500.15
- 100 $49.519 $4951.9
- 1000 $49.028 $49028
- 10000 $48.5423 $485423
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：SI2314EDS-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI2314EDS-T1-GE3
- SKU：267061
- Description：MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
User Guide
User Guide
SI2314EDS-T1-GE3 Details
MOSFET 20V 4.9A 1.25W 33mohm @ 4.5V
SI2314EDS-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Published: 2015
- Gate to Source Voltage (Vgs): 12V
- Factory Lead Time: 14 Weeks
- Element Configuration: Single
- DS Breakdown Voltage-Min: 20V
- Power Dissipation: 750mW
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Weight: 1.437803g
- Vgs(th) (Max) @ Id: 950mV @ 250μA
- Power Dissipation-Max: 750mW Ta
- Turn-Off Delay Time: 13.5 μs
- Fall Time (Typ): 5.9 μs
- Current - Continuous Drain (Id) @ 25°C: 3.77A Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Vgs (Max): ±12V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Rise Time: 1.4 μs
- Continuous Drain Current (ID): 3.77A
- Turn On Delay Time: 530 ns
- Rds On (Max) @ Id, Vgs: 33m Ω @ 5A, 4.5V
Search for similar products
SI2314EDS-T1-GE3 Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & SI2314EDS-T1-GE3
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
