IXFH20N60IXYS
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    • Manufacturer No：
      IXFH20N60
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      11102459
    • Description：
      MOSFET N-CH 600V 20A TO-247AD
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    • Manufacturer No：
      IXFH20N60
    • Manufacturer：
      IXYS
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IXFH20N60
    • SKU：
      11102459
    • Description：
      MOSFET N-CH 600V 20A TO-247AD

    User Guide

    User Guide

    IXFH20N60 Details

    MOSFET N-CH 600V 20A TO-247AD

    IXFH20N60 Specification Parameters

    • Mounting Type: Through Hole
    • Termination: Through Hole
    • RoHS Status: RoHS Compliant
    • Pbfree Code: yes
    • Lead Free: Lead Free
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Packaging: Tube
    • Number of Pins: 3
    • Qualification Status: Not Qualified
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 600V
    • Gate to Source Voltage (Vgs): 20V
    • Current Rating: 20A
    • Operating Temperature: -55°C~150°C TJ
    • JESD-609 Code: e1
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Pulsed Drain Current-Max (IDM): 80A
    • Fall Time (Typ): 40 ns
    • Additional Feature: AVALANCHE RATED
    • HTS Code: 8541.29.00.95
    • Weight: 6g
    • Series: HiPerFET?
    • Current - Continuous Drain (Id) @ 25°C: 20A Tc
    • Vgs(th) (Max) @ Id: 4.5V @ 4mA
    • Nominal Vgs: 4.5 V
    • Mount: Through Hole
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Moisture Sensitivity Level (MSL): Not Applicable
    • Part Status: Obsolete
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Number of Terminations: 3
    • Pin Count: 3
    • REACH SVHC: No SVHC
    • Transistor Element Material: SILICON
    • Voltage - Rated DC: 600V
    • Dual Supply Voltage: 600V
    • Threshold Voltage: 4.5V
    • Continuous Drain Current (ID): 20A
    • Published: 2000
    • FET Type: N-Channel
    • Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
    • Operating Mode: ENHANCEMENT MODE
    • Power Dissipation: 300W
    • Subcategory: FET General Purpose Power
    • Package / Case: TO-247-3
    • Turn-Off Delay Time: 70 ns
    • Reverse Recovery Time: 250 ns
    • Resistance: 350mOhm
    • Power Dissipation-Max: 300W Tc
    • Rise Time: 43 ns
    • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
    • Rds On (Max) @ Id, Vgs: 350m Ω @ 10A, 10V
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