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- Manufacturer No：IXFH14N60P
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFH14N60P
- SKU：3913093
- Description：MOSFET N-CH 600V 14A TO-247
User Guide
User Guide
IXFH14N60P Details
MOSFET N-CH 600V 14A TO-247
IXFH14N60P Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Threshold Voltage: 5.5V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Gate to Source Voltage (Vgs): 30V
- JESD-609 Code: e1
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Width: 5.3mm
- Power Dissipation: 300W
- Subcategory: FET General Purpose Power
- Package / Case: TO-247-3
- Continuous Drain Current (ID): 14A
- Reverse Recovery Time: 200 ns
- Pulsed Drain Current-Max (IDM): 42A
- Fall Time (Typ): 26 ns
- Rise Time: 27 ns
- Power Dissipation-Max: 300W Tc
- Height: 21.46mm
- Nominal Vgs: 5.5 V
- Series: HiPerFET?, PolarHT?
- Avalanche Energy Rating (Eas): 900 mJ
- Rds On (Max) @ Id, Vgs: 550m Ω @ 7A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- ECCN Code: EAR99
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Published: 2006
- Transistor Element Material: SILICON
- Voltage - Rated DC: 600V
- Dual Supply Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Factory Lead Time: 30 Weeks
- Case Connection: DRAIN
- Vgs (Max): ±30V
- Current Rating: 14A
- Turn-Off Delay Time: 70 ns
- Additional Feature: AVALANCHE RATED
- Length: 16.26mm
- Turn On Delay Time: 23 ns
- JEDEC-95 Code: TO-247AD
- Current - Continuous Drain (Id) @ 25°C: 14A Tc
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Drain-source On Resistance-Max: 0.55Ohm
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
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