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- Manufacturer No：IXFR120N20
- Manufacturer：IXYS
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IXFR120N20
- SKU：12394974
- Description：MOSFET N-CH 200V 105A ISOPLUS247
User Guide
User Guide
IXFR120N20 Details
MOSFET N-CH 200V 105A ISOPLUS247
IXFR120N20 Specification Parameters
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Terminations: 3
- Pin Count: 3
- Drain to Source Breakdown Voltage: 200V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Case Connection: ISOLATED
- Technology: MOSFET (Metal Oxide)
- Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Additional Feature: AVALANCHE RATED
- Rise Time: 65 ns
- Series: HiPerFET?
- Continuous Drain Current (ID): 105A
- Package / Case: ISOPLUS247?
- Power Dissipation-Max: 417W Tc
- Current - Continuous Drain (Id) @ 25°C: 105A Tc
- Rds On (Max) @ Id, Vgs: 17m Ω @ 60A, 10V
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- Moisture Sensitivity Level (MSL): Not Applicable
- Part Status: Obsolete
- Packaging: Tube
- Number of Pins: 3
- Voltage - Rated DC: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Published: 2003
- JESD-609 Code: e1
- FET Type: N-Channel
- Power Dissipation: 400W
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Fall Time (Typ): 35 ns
- Turn-Off Delay Time: 110 ns
- Resistance: 17mOhm
- Current Rating: 105A
- Pulsed Drain Current-Max (IDM): 480A
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
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