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- Manufacturer No：BUZ32
- Manufacturer：Infineon
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUZ32
- SKU：2653695
- Description：N-Channel 200 V 9.5A (Tc) 75W (Tc) Through Hole PG-TO220-3
User Guide
User Guide
BUZ32 Details
N-Channel 200 V 9.5A (Tc) 75W (Tc) Through Hole PG-TO220-3
BUZ32 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: RoHS Compliant
- JESD-609 Code: e3
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pin Count: 3
- Voltage - Rated DC: 200V
- Terminal Finish: Matte Tin (Sn)
- Published: 2005
- Element Configuration: Single
- Power Dissipation: 75W
- FET Type: N-Channel
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Additional Feature: AVALANCHE RATED
- Current Rating: 9.5A
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Drain-source On Resistance-Max: 0.4Ohm
- Power Dissipation-Max: 75W Tc
- Current - Continuous Drain (Id) @ 25°C: 9.5A Tc
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- Qualification Status: Not Qualified
- Drain to Source Breakdown Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 30 ns
- Turn-Off Delay Time: 55 ns
- Continuous Drain Current (ID): 9.5A
- Rise Time: 40ns
- Series: SIPMOS?
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Rds On (Max) @ Id, Vgs: 400m Ω @ 6A, 10V
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Infineon — Manufacturer Introduction
Infineon Technologies AG is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future.
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