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- Manufacturer No：SI6463BDQ-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI6463BDQ-T1-E3
- SKU：13133850
- Description：MOSFET P-CH 20V 6.2A 8-TSSOP
User Guide
User Guide
SI6463BDQ-T1-E3 Details
MOSFET P-CH 20V 6.2A 8-TSSOP
SI6463BDQ-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Packaging: Cut Tape (CT)
- Operating Mode: ENHANCEMENT MODE
- Resistance: 15mOhm
- Turn On Delay Time: 35 ns
- Width: 3.0988mm
- Fall Time (Typ): 40 ns
- Length: 4.4958mm
- Series: TrenchFET?
- Height: 1.0414mm
- Max Power Dissipation: 1.05W
- Vgs(th) (Max) @ Id: 800mV @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 6.2A Ta
- Rds On (Max) @ Id, Vgs: 15m Ω @ 7.4A, 4.5V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Terminations: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2008
- Drain to Source Voltage (Vdss): 20V
- Technology: MOSFET (Metal Oxide)
- Gate to Source Voltage (Vgs): 8V
- Subcategory: Other Transistors
- FET Type: P-Channel
- Package / Case: 8-TSSOP (0.173, 4.40mm Width)
- Rise Time: 40 ns
- Drain to Source Breakdown Voltage: -20V
- Drain Current-Max (Abs) (ID): 6.2A
- Power Dissipation: 1.05W
- Turn-Off Delay Time: 190 ns
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
- Continuous Drain Current (ID): -7.4A
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