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- Manufacturer No：SI4466DY-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI4466DY-T1-GE3
- SKU：269012
- Description：MOSFET N-CH 20V 9.5A 8-SOIC
User Guide
User Guide
SI4466DY-T1-GE3 Details
MOSFET N-CH 20V 9.5A 8-SOIC
SI4466DY-T1-GE3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Part Status: Obsolete
- Number of Terminations: 8
- Terminal Position: DUAL
- Terminal Form: GULL WING
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 30
- Element Configuration: Single
- DS Breakdown Voltage-Min: 20V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Technology: MOSFET (Metal Oxide)
- Pulsed Drain Current-Max (IDM): 50A
- Turn On Delay Time: 20 ns
- Turn-Off Delay Time: 150 ns
- Continuous Drain Current (ID): 9.5A
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Power Dissipation-Max: 1.5W Ta
- Vgs(th) (Max) @ Id: 1.4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 9.5A Ta
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 8
- Pin Count: 8
- Published: 2016
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Operating Mode: ENHANCEMENT MODE
- Fall Time (Typ): 15 ns
- Rise Time: 15ns
- Series: TrenchFET?
- Vgs (Max): ±12V
- JEDEC-95 Code: MS-012AA
- Drain-source On Resistance-Max: 0.009Ohm
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 9m Ω @ 13.5A, 4.5V
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