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- Manufacturer No：SI7120DN-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI7120DN-T1-E3
- SKU：13233067
- Description：MOSFET N-CH 60V 6.3A 1212-8
User Guide
User Guide
SI7120DN-T1-E3 Details
MOSFET N-CH 60V 6.3A 1212-8
SI7120DN-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Min Operating Temperature: -55°C
- Number of Pins: 8
- Terminal Position: DUAL
- Drain to Source Breakdown Voltage: 60V
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Power Dissipation: 1.5W
- Pulsed Drain Current-Max (IDM): 40A
- Case Connection: DRAIN
- Fall Time (Typ): 12 ns
- Drain Current-Max (Abs) (ID): 6.3A
- Series: TrenchFET?
- Resistance: 19mOhm
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- JESD-30 Code: S-XDSO-C5
- Current - Continuous Drain (Id) @ 25°C: 6.3A Ta
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Part Status: Obsolete
- Pin Count: 8
- Peak Reflow Temperature (Cel): 260
- Number of Terminations: 5
- Published: 2011
- Max Operating Temperature: 150°C
- Continuous Drain Current (ID): 10A
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Max Power Dissipation: 1.5W
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Turn-Off Delay Time: 50 ns
- Rise Time: 12 ns
- Turn On Delay Time: 14 ns
- Subcategory: FET General Purpose Powers
- Vgs(th) (Max) @ Id: 3.5V @ 250μA
- Package / Case: PowerPAK? 1212-8
- Avalanche Energy Rating (Eas): 24 mJ
- Rds On (Max) @ Id, Vgs: 19m Ω @ 10A, 10V
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