SI7138DP-T1-E3Vishay Siliconix
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    SI7138DP-T1-E3123
    • Manufacturer No：
      SI7138DP-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      331484
    • Description：
      MOSFET N-CH 60V 30A PPAK SO-8
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    SI7138DP-T1-E3
    • Manufacturer No：
      SI7138DP-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI7138DP-T1-E3
    • SKU：
      331484
    • Description：
      MOSFET N-CH 60V 30A PPAK SO-8

    User Guide

    User Guide

    SI7138DP-T1-E3 Details

    MOSFET N-CH 60V 30A PPAK SO-8

    SI7138DP-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Number of Pins: 8
    • Terminal Position: DUAL
    • Drain to Source Breakdown Voltage: 60V
    • Terminal Finish: Matte Tin (Sn)
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • FET Type: N-Channel
    • Continuous Drain Current (ID): 30A
    • Operating Mode: ENHANCEMENT MODE
    • Terminal Form: C BEND
    • Subcategory: FET General Purpose Power
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Rise Time: 12ns
    • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
    • Current - Continuous Drain (Id) @ 25°C: 30A Tc
    • JESD-30 Code: R-XDSO-C5
    • Resistance: 7.8mOhm
    • Power Dissipation-Max: 5.4W Ta 96W Tc
    • Rds On (Max) @ Id, Vgs: 7.8m Ω @ 19.7A, 10V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Pin Count: 8
    • Peak Reflow Temperature (Cel): 260
    • Number of Terminations: 5
    • Published: 2011
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Vgs (Max): ±20V
    • Case Connection: DRAIN
    • Turn-Off Delay Time: 50 ns
    • Fall Time (Typ): 8 ns
    • Nominal Vgs: 2 V
    • Package / Case: PowerPAK? SO-8
    • Power Dissipation: 5.4W
    • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
    • Avalanche Energy Rating (Eas): 93 mJ
    • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 30V
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