TN0200K-T1-E3Vishay Siliconix
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    • Manufacturer No：
      TN0200K-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      13233141
    • Description：
      MOSFET N-CH 20V SOT23-3
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    • Manufacturer No：
      TN0200K-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      TN0200K-T1-E3
    • SKU：
      13233141
    • Description：
      MOSFET N-CH 20V SOT23-3

    User Guide

    User Guide

    TN0200K-T1-E3 Details

    MOSFET N-CH 20V SOT23-3

    TN0200K-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Part Status: Obsolete
    • Number of Terminations: 3
    • Pin Count: 3
    • Termination: SMD/SMT
    • Time@Peak Reflow Temperature-Max (s): 30
    • Published: 2009
    • Element Configuration: Single
    • Voltage: 20V
    • FET Type: N-Channel
    • Current: 12A
    • Operating Mode: ENHANCEMENT MODE
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Width: 3.05mm
    • Rise Time: 20 ns
    • Max Power Dissipation: 350mW
    • Threshold Voltage: 600mV
    • Turn-Off Delay Time: 55 ns
    • Turn On Delay Time: 17 ns
    • Continuous Drain Current (ID): 730mA
    • Nominal Vgs: 600 mV
    • Rds On (Max) @ Id, Vgs: 400m Ω @ 600mA, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Min Operating Temperature: -55°C
    • Terminal Position: DUAL
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Max Operating Temperature: 150°C
    • REACH SVHC: Unknown
    • Drain to Source Breakdown Voltage: 20V
    • Packaging: Cut Tape (CT)
    • Technology: MOSFET (Metal Oxide)
    • Transistor Application: SWITCHING
    • Gate to Source Voltage (Vgs): 8V
    • Subcategory: FET General Purpose Power
    • Fall Time (Typ): 20 ns
    • Height: 1.016mm
    • Power Dissipation: 350mW
    • Resistance: 400mOhm
    • Series: TrenchFET?
    • Additional Feature: LOGIC LEVEL COMPATIBLE
    • Length: 3.0226mm
    • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
    • Vgs(th) (Max) @ Id: 1V @ 50μA
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