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- Manufacturer No：SI3424DV-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3424DV-T1-E3
- SKU：13292340
- Description：MOSFET N-CH 30V 5A 6-TSOP
User Guide
User Guide
SI3424DV-T1-E3 Details
MOSFET N-CH 30V 5A 6-TSOP
SI3424DV-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Min Operating Temperature: -55°C
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2008
- Drain Current-Max (Abs) (ID): 5A
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Subcategory: FET General Purpose Power
- Rise Time: 10 ns
- Turn-Off Delay Time: 20 ns
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Resistance: 28mOhm
- Current - Continuous Drain (Id) @ 25°C: 5A Ta
- Power Dissipation: 1.14W
- Vgs(th) (Max) @ Id: 800mV @ 250μA (Min)
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Terminations: 6
- Pin Count: 6
- Peak Reflow Temperature (Cel): 260
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Continuous Drain Current (ID): 5A
- Gate to Source Voltage (Vgs): 20V
- Terminal Finish: MATTE TIN
- FET Type: N-Channel
- Operating Mode: ENHANCEMENT MODE
- Fall Time (Typ): 10 ns
- Threshold Voltage: 800mV
- Turn On Delay Time: 7 ns
- Series: TrenchFET?
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Nominal Vgs: 800 mV
- Max Power Dissipation: 1.14W
- Rds On (Max) @ Id, Vgs: 28m Ω @ 6.7A, 10V
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