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- Manufacturer No：BYG10M-E3/TR3
- Manufacturer：Vishay Semiconductor Diodes Division
- Category：Diodes - Rectifiers - Single
- Datasheet：BYG10M-E3/TR3
- SKU：13482813
- Description：Vishay BYG10M-E3/TR3, Rectifier Diode, 1000V, 4000ns, 1.5A, 2-pin SMA
User Guide
User Guide
BYG10M-E3/TR3 Details
Vishay BYG10M-E3/TR3, Rectifier Diode, 1000V, 4000ns, 1.5A, 2-pin SMA
BYG10M-E3/TR3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Pins: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Phases: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Min Operating Temperature: -55°C
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Diode Element Material: SILICON
- Operating Temperature - Junction: -55°C~150°C
- Average Rectified Current: 1.5A
- Peak Reverse Current: 1μA
- Max Repetitive Reverse Voltage (Vrrm): 1kV
- Max Surge Current: 30A
- Max Forward Surge Current (Ifsm): 30A
- HTS Code: 8541.10.00.80
- Voltage - DC Reverse (Vr) (Max): 1000V
- Subcategory: Rectifier Diodes
- Additional Feature: FREE WHEELING DIODE
- Reverse Recovery Time: 4 μs
- Diode Type: Avalanche
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
- Base Part Number: BYG10M
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Pin Count: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Contact Plating: Tin
- Application: GENERAL PURPOSE
- Factory Lead Time: 10 Weeks
- Published: 2011
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Width: 2.79mm
- Forward Current: 1.5A
- Max Reverse Voltage (DC): 1kV
- Reverse Voltage: 1kV
- Peak Non-Repetitive Surge Current: 30A
- Length: 4.5mm
- Package / Case: DO-214AC, SMA
- Terminal Form: C BEND
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Forward Voltage: 1.15V
- Recovery Time: 4 μs
- Current - Reverse Leakage @ Vr: 1μA @ 1000V
- Height: 2.09mm
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