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- Manufacturer No：IRF630PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF630PBF
- SKU：144828
- Description：Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB
User Guide
User Guide
IRF630PBF Details
Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB
IRF630PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 200V
- Published: 2006
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Fall Time (Typ): 20 ns
- Resistance: 400mOhm
- Length: 10.41mm
- Turn-Off Delay Time: 39 ns
- Rds On Max: 400 mΩ
- Height: 9.01mm
- Power Dissipation: 74W
- Turn On Delay Time: 9.4 ns
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Continuous Drain Current (ID): 9A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain to Source Resistance: 400mOhm
- Weight: 6.000006g
- Rise Time: 28ns
- Current - Continuous Drain (Id) @ 25°C: 9A Tc
- Input Capacitance: 800pF
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Power Dissipation-Max: 74W Tc
- Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
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