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- Manufacturer No：2N7002-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：2N7002-T1-GE3
- SKU：154861
- Description：Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R
User Guide
User Guide
2N7002-T1-GE3 Details
Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R
2N7002-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Number of Terminations: 3
- Terminal Form: GULL WING
- Published: 2009
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 115mA
- Drive Voltage (Max Rds On,Min Rds On): 5V 10V
- Feedback Cap-Max (Crss): 5 pF
- Power Dissipation-Max: 200mW Ta
- Current - Continuous Drain (Id) @ 25°C: 115mA Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Terminal Position: DUAL
- Number of Pins: 3
- Drain to Source Breakdown Voltage: 60V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 40V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Subcategory: FET General Purpose Powers
- Weight: 1.437803g
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Rds On (Max) @ Id, Vgs: 7.5 Ω @ 500mA, 10V
- Base Part Number: 2N7002
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