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- Manufacturer No：2N7002K-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：2N7002K-T1-E3
- SKU：156945
- Description：VISHAY - 2N7002K-T1-E3 - N CHANNEL MOSFET, 60V, 0.5A, SOT-23
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User Guide
2N7002K-T1-E3 Details
VISHAY - 2N7002K-T1-E3 - N CHANNEL MOSFET, 60V, 0.5A, SOT-23
2N7002K-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Published: 2016
- Drain to Source Breakdown Voltage: 60V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Continuous Drain Current (ID): 300mA
- Vgs (Max): ±20V
- Resistance: 2Ohm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 35 ns
- Power Dissipation: 350mW
- Height: 1.12mm
- Nominal Vgs: 2 V
- Supplier Device Package: SOT-23-3 (TO-236)
- Length: 3.0226mm
- Current - Continuous Drain (Id) @ 25°C: 300mA Ta
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 60V
- Threshold Voltage: 2.5V
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Width: 1.397mm
- Drain to Source Resistance: 2Ohm
- Turn On Delay Time: 25 ns
- Input Capacitance: 30pF
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Series: TrenchFET?
- Weight: 1.437803g
- Rds On Max: 2 Ω
- Power Dissipation-Max: 350mW Ta
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
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