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- Manufacturer No：IRF740A
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF740A
- SKU：159515
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 10A Tc 10A 125W 22ns
User Guide
User Guide
IRF740A Details
Tube Through Hole N-Channel Single Mosfet Transistor 10A Tc 10A 125W 22ns
IRF740A Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Continuous Drain Current (ID): 10A
- Voltage - Rated DC: 400V
- Drain to Source Breakdown Voltage: 400V
- FET Type: N-Channel
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Rise Time: 35ns
- Length: 10.41mm
- Power Dissipation: 125W
- Drain to Source Resistance: 550mOhm
- Current - Continuous Drain (Id) @ 25°C: 10A Tc
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
- Input Capacitance: 1.03nF
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Published: 2011
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Current Rating: 10A
- Gate to Source Voltage (Vgs): 30V
- Drain to Source Voltage (Vdss): 400V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Width: 4.7mm
- Turn On Delay Time: 10 ns
- Vgs (Max): ±30V
- Fall Time (Typ): 22 ns
- Turn-Off Delay Time: 24 ns
- Weight: 6.000006g
- Power Dissipation-Max: 125W Tc
- Height: 9.01mm
- Rds On Max: 550 mΩ
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V
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