IRFBC30APBF
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Radiation Hardening
NoLead Free
Lead FreeMin Operating Temperature
-55°CFactory Lead Time
8 WeeksPackaging
TubeNumber of Pins
3Max Operating Temperature
150°CREACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleVoltage
600VDrain to Source Voltage (Vdss)
600VDrain to Source Breakdown Voltage
600VGate to Source Voltage (Vgs)
30VThreshold Voltage
4.5VPublished
2004Operating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Package / Case
TO-220-3Width
4.7mmSupplier Device Package
TO-220ABVgs (Max)
±30VFall Time (Typ)
12 nsResistance
2.2OhmDrain to Source Resistance
2.2OhmContinuous Drain Current (ID)
3.6ALength
10.41mmInput Capacitance
510pFTurn-Off Delay Time
19 nsWeight
6.000006gVgs(th) (Max) @ Id
4.5V @ 250μACurrent
44ARise Time
13nsTurn On Delay Time
9.8 nsGate Charge (Qg) (Max) @ Vgs
23nC @ 10VHeight
9.01mmPower Dissipation
74WPower Dissipation-Max
74W TcCurrent - Continuous Drain (Id) @ 25°C
3.6A TcNominal Vgs
4.5 VInput Capacitance (Ciss) (Max) @ Vds
510pF @ 25VRds On Max
2.2 ΩRds On (Max) @ Id, Vgs
2.2Ohm @ 2.2A, 10V