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- Manufacturer No：IRF830SPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF830SPBF
- SKU：160994
- Description：MOSFET N-CH 500V 4.5A D2PAK
User Guide
User Guide
IRF830SPBF Details
MOSFET N-CH 500V 4.5A D2PAK
IRF830SPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Packaging: Tube
- Published: 2016
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 20V
- Current Rating: 1.5A
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 4.5A
- Drain to Source Resistance: 1.5Ohm
- Length: 10.67mm
- Fall Time (Typ): 16 ns
- Turn-Off Delay Time: 42 ns
- Power Dissipation: 3.1W
- Rds On Max: 1.5 Ω
- Turn On Delay Time: 8.2 ns
- Power Dissipation-Max: 3.1W Ta 74W Tc
- Input Capacitance: 610pF
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 500V
- Drain to Source Breakdown Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Height: 4.83mm
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Resistance: 1.5Ohm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 9.65mm
- Supplier Device Package: D2PAK
- Weight: 1.437803g
- Rise Time: 16ns
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 4.5A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
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