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- Manufacturer No：IRFB11N50APBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFB11N50APBF
- SKU：161097
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 11A Tc 11A 170W 28ns
User Guide
User Guide
IRFB11N50APBF Details
Tube Through Hole N-Channel Single Mosfet Transistor 11A Tc 11A 170W 28ns
IRFB11N50APBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Packaging: Tube
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 500V
- Drain to Source Breakdown Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Current Rating: 11A
- Vgs (Max): ±30V
- Turn On Delay Time: 14 ns
- Fall Time (Typ): 28 ns
- Weight: 6.000006g
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Drain to Source Resistance: 520mOhm
- Height: 9.01mm
- Power Dissipation-Max: 170W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
- Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Published: 2009
- Factory Lead Time: 11 Weeks
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 30V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 11A
- Rise Time: 35ns
- Length: 10.41mm
- Turn-Off Delay Time: 32 ns
- Nominal Vgs: 4 V
- Resistance: 520mOhm
- Power Dissipation: 170W
- Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
- Rds On Max: 520 mΩ
- Input Capacitance: 1.423nF
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