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Inventory:17475
  • Qty Unit Price price
  • 1 $0.98 $0.98
  • 10 $0.97 $9.7
  • 100 $0.96 $96
  • 1000 $0.95 $950
  • 10000 $0.94 $9400

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  • Manufacturer No:
    ZXMN10A25GTA
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    ZXMN10A25GTA
  • SKU:
    1756612
  • Description:
    ZXMN10A25G Series N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount-SOT-223-3

ZXMN10A25GTA Details

ZXMN10A25G Series N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount-SOT-223-3

ZXMN10A25GTA Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Pin Count: 4
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2006
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Height: 1.65mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Width: 3.7mm
  • Turn-Off Delay Time: 18 ns
  • Power Dissipation: 3.9W
  • Turn On Delay Time: 4.9 ns
  • Resistance: 125mOhm
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Fall Time (Typ): 9.4 ns
  • Rds On (Max) @ Id, Vgs: 125m Ω @ 2.9A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 4
  • Pbfree Code: no
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 100V
  • Time@Peak Reflow Temperature-Max (s): 40
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Continuous Drain Current (ID): 4A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • JESD-30 Code: R-PDSO-G4
  • Length: 6.7mm
  • Package / Case: TO-261-4, TO-261AA
  • Drain Current-Max (Abs) (ID): 2.9A
  • Weight: 7.994566mg
  • Rise Time: 3.7 ns
  • Power Dissipation-Max: 2W Ta
  • Additional Feature: FAST SWITCHING
  • Current - Continuous Drain (Id) @ 25°C: 2.9A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 859pF @ 50V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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