Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:33788
- Qty Unit Price price
- 1 $1.094 $1.094
- 10 $1.083 $10.83
- 100 $1.072 $107.2
- 1000 $1.061 $1061
- 10000 $1.05 $10500
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：ZVP2106GTA
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：ZVP2106GTA
- SKU：1761817
- Description：Trans MOSFET P-CH 60V 0.45A Automotive 4-Pin(3+Tab) SOT-223 T/R
User Guide
User Guide
ZVP2106GTA Details
Trans MOSFET P-CH 60V 0.45A Automotive 4-Pin(3+Tab) SOT-223 T/R
ZVP2106GTA Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Terminal Position: DUAL
- Pin Count: 4
- Pbfree Code: no
- Termination: SMD/SMT
- Published: 2012
- Drain to Source Voltage (Vdss): 60V
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 20V
- Pulsed Drain Current-Max (IDM): 4A
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Fall Time (Typ): 15 ns
- JESD-30 Code: R-PDSO-G4
- FET Type: P-Channel
- Length: 6.7mm
- Package / Case: TO-261-4, TO-261AA
- Weight: 7.994566mg
- Drain to Source Breakdown Voltage: -60V
- Drain Current-Max (Abs) (ID): 0.45A
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Threshold Voltage: -3.5V
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 18V
- Current Rating: -450mA
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 4
- Number of Pins: 3
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Factory Lead Time: 17 Weeks
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Height: 1.8mm
- Resistance: 5Ohm
- Rise Time: 15 ns
- Continuous Drain Current (ID): 450mA
- Turn-Off Delay Time: 12 ns
- Width: 3.7mm
- Turn On Delay Time: 7 ns
- Voltage - Rated DC: -60V
- Dual Supply Voltage: -60V
- Power Dissipation-Max: 2W Ta
- Rds On (Max) @ Id, Vgs: 5 Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C: 450mA Ta
- Nominal Vgs: -3.5 V
Search for similar products
ZVP2106GTA Similar Products
The four parts on the right have similar specifications to Diodes Incorporated & ZVP2106GTA
Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
