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IRFL9014TRPBF123
  • Manufacturer No:
    IRFL9014TRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    219201
  • Description:
    MOSFET P-CH 60V 1.8A SOT223
  • Quantity:
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Inventory:72885
  • Qty Unit Price price
  • 1 $1308.041 $1308.041
  • 10 $1295.09 $12950.9
  • 100 $1282.267 $128226.7
  • 1000 $1269.571 $1269571
  • 10000 $1257 $12570000

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IRFL9014TRPBF
  • Manufacturer No:
    IRFL9014TRPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRFL9014TRPBF
  • SKU:
    219201
  • Description:
    MOSFET P-CH 60V 1.8A SOT223

IRFL9014TRPBF Details

MOSFET P-CH 60V 1.8A SOT223

IRFL9014TRPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 4
  • Pin Count: 4
  • Terminal Form: GULL WING
  • Drain to Source Voltage (Vdss): 60V
  • Published: 2011
  • Max Junction Temperature (Tj): 150°C
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Power Dissipation: 2W
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: Other Transistors
  • Case Connection: DRAIN
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Width: 3.7mm
  • Package / Case: TO-261-4, TO-261AA
  • Turn On Delay Time: 11 ns
  • Threshold Voltage: -2V
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Turn-Off Delay Time: 9.6 ns
  • Current - Continuous Drain (Id) @ 25°C: 1.8A Tc
  • Power Dissipation-Max: 2W Ta 3.1W Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Terminations: 4
  • Factory Lead Time: 8 Weeks
  • Peak Reflow Temperature (Cel): 260
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 40
  • REACH SVHC: Unknown
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Height: 1.8mm
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • FET Type: P-Channel
  • Length: 6.7mm
  • Resistance: 500mOhm
  • Additional Feature: AVALANCHE RATED
  • Drain to Source Breakdown Voltage: -60V
  • Fall Time (Typ): 31 ns
  • Rise Time: 63 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Weight: 250.212891mg
  • Continuous Drain Current (ID): -1.8A

Excellent

Based on reviews

Excellent

Based on reviews

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