Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:3536
- Qty Unit Price price
- 1 $2703.492 $2703.492
- 10 $2676.724 $26767.24
- 100 $2650.221 $265022.1
- 1000 $2623.981 $2623981
- 10000 $2598 $25980000
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：IRF840PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF840PBF
- SKU：176724
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 8A Tc 8A 125W 20ns
User Guide
User Guide
IRF840PBF Details
Tube Through Hole N-Channel Single Mosfet Transistor 8A Tc 8A 125W 20ns
IRF840PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Factory Lead Time: 11 Weeks
- Transistor Element Material: SILICON
- Voltage - Rated DC: 500V
- Gate to Source Voltage (Vgs): 20V
- Current Rating: 8A
- Continuous Drain Current (ID): 8A
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 4V
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 14 ns
- Power Dissipation: 125W
- Nominal Vgs: 4 V
- Current - Continuous Drain (Id) @ 25°C: 8A Tc
- Rise Time: 23ns
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Drain-source On Resistance-Max: 0.85Ohm
- Rds On (Max) @ Id, Vgs: 850m Ω @ 4.8A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- Drain Current-Max (Abs) (ID): 8A
- FET Type: N-Channel
- Published: 1997
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Width: 4.7mm
- Fall Time (Typ): 20 ns
- Additional Feature: AVALANCHE RATED
- Length: 10.41mm
- Weight: 6.000006g
- Power Dissipation-Max: 125W Tc
- Turn-Off Delay Time: 49 ns
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Recovery Time: 970 ns
Search for similar products
IRF840PBF Similar Products
The four parts on the right have similar specifications to Vishay Siliconix & IRF840PBF
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
