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Inventory:127500
  • Qty Unit Price price
  • 1 $0.188 $0.188
  • 10 $0.186 $1.86
  • 100 $0.184 $18.4
  • 1000 $0.182 $182
  • 10000 $0.1798 $1798

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  • Manufacturer No:
    DMG9926USD-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    DMG9926USD-13
  • SKU:
    1775001
  • Description:
    MOSFET 2N-CH 20V 8A SOP8L

DMG9926USD-13 Details

MOSFET 2N-CH 20V 8A SOP8L

DMG9926USD-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2009
  • Factory Lead Time: 15 Weeks
  • Drain to Source Breakdown Voltage: 20V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Continuous Drain Current (ID): 8A
  • Transistor Application: SWITCHING
  • Height: 1.5mm
  • Additional Feature: HIGH RELIABILITY
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Length: 4.95mm
  • Max Power Dissipation: 1.3W
  • FET Type: 2 N-Channel (Dual)
  • Width: 3.95mm
  • Weight: 850.995985mg
  • Turn On Delay Time: 13.2 ns
  • Fall Time (Typ): 21.7 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 867pF @ 15V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Drain Current-Max (Abs) (ID): 8A
  • Pulsed Drain Current-Max (IDM): 30A
  • Operating Mode: ENHANCEMENT MODE
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: FET General Purpose Power
  • Packaging: Digi-Reel?
  • Power Dissipation: 1.3W
  • FET Feature: Logic Level Gate
  • Resistance: 24mOhm
  • Vgs(th) (Max) @ Id: 900mV @ 250μA
  • Rise Time: 12.6 ns
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Turn-Off Delay Time: 64.8 ns
  • Rds On (Max) @ Id, Vgs: 24m Ω @ 8.2A, 4.5V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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