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- Manufacturer No：DMG6602SVT-7
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：DMG6602SVT-7
- SKU：1783670
- Description：N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6
User Guide
User Guide
DMG6602SVT-7 Details
N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6
DMG6602SVT-7 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Width: 1.6mm
- Height: 1mm
- Drain to Source Breakdown Voltage: 30V
- Pulsed Drain Current-Max (IDM): 13A
- Length: 2.9mm
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Rise Time: 5 ns
- Drain Current-Max (Abs) (ID): 3.4A
- Turn-Off Delay Time: 13 ns
- Fall Time (Typ): 3 ns
- Resistance: 95mOhm
- Max Power Dissipation: 840mW
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- FET Feature: Logic Level Gate, 4.5V Drive
- Rds On (Max) @ Id, Vgs: 60m Ω @ 3.1A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Published: 2012
- Terminal Finish: Matte Tin (Sn)
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Part Status: Not For New Designs
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Additional Feature: HIGH RELIABILITY
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID): 2.8A
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Turn On Delay Time: 3 ns
- FET Type: N and P-Channel
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Power Dissipation: 840mW
- Vgs(th) (Max) @ Id: 2.3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Current - Continuous Drain (Id) @ 25°C: 3.4A 2.8A
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Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
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