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- Manufacturer No：SIA517DJ-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：SIA517DJ-T1-GE3
- SKU：244608
- Description：MOSFET N/P-CH 12V 4.5A SC-70-6
User Guide
User Guide
SIA517DJ-T1-GE3 Details
MOSFET N/P-CH 12V 4.5A SC-70-6
SIA517DJ-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Qualification Status: Not Qualified
- Number of Pins: 6
- Peak Reflow Temperature (Cel): 260
- Drain to Source Voltage (Vdss): 12V
- Time@Peak Reflow Temperature-Max (s): 40
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Height: 800μm
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- Continuous Drain Current (ID): 4.5A
- Fall Time (Typ): 25 ns
- Turn On Delay Time: 30 ns
- Max Power Dissipation: 6.5W
- Width: 2.05mm
- Series: TrenchFET?
- Power Dissipation: 1.9W
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Weight: 28.009329mg
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- Terminal Finish: Matte Tin (Sn)
- Drain to Source Breakdown Voltage: 12V
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Terminal Form: NO LEAD
- Published: 2017
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Case Connection: DRAIN
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Rise Time: 25 ns
- Turn-Off Delay Time: 30 ns
- Length: 2.05mm
- FET Feature: Logic Level Gate
- Vgs(th) (Max) @ Id: 1V @ 250μA
- FET Type: N and P-Channel
- Nominal Vgs: 400 mV
- Package / Case: PowerPAK? SC-70-6 Dual
- Rds On (Max) @ Id, Vgs: 29m Ω @ 5A, 4.5V
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