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DMN2075U-7123
Inventory:54349
  • Qty Unit Price price
  • 1 $599.268 $599.268
  • 10 $593.334 $5933.34
  • 100 $587.459 $58745.9
  • 1000 $581.642 $581642
  • 10000 $575.883 $5758830

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DMN2075U-7
  • Manufacturer No:
    DMN2075U-7
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    DMN2075U-7
  • SKU:
    1785109
  • Description:
    MOSFET N-CH 20V 4.2A SOT23

DMN2075U-7 Details

MOSFET N-CH 20V 4.2A SOT23

DMN2075U-7 Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Part Status: Obsolete
  • Number of Terminations: 3
  • Pin Count: 3
  • Terminal Form: GULL WING
  • Published: 2012
  • Time@Peak Reflow Temperature-Max (s): 40
  • Element Configuration: Single
  • DS Breakdown Voltage-Min: 20V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Width: 1.4mm
  • Height: 1.1mm
  • Gate to Source Voltage (Vgs): 8V
  • Additional Feature: HIGH RELIABILITY
  • Continuous Drain Current (ID): 4.2A
  • Factory Lead Time: 40 Weeks
  • Weight: 7.994566mg
  • Subcategory: FET General Purpose Powers
  • Fall Time (Typ): 6.7 ns
  • Turn On Delay Time: 7.4 ns
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Rds On (Max) @ Id, Vgs: 38m Ω @ 3.6A, 4.5V
  • Turn-Off Delay Time: 28.1 ns
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Qualification Status: Not Qualified
  • REACH SVHC: No SVHC
  • Peak Reflow Temperature (Cel): 260
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Length: 3mm
  • Threshold Voltage: 1V
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Power Dissipation: 800mW
  • Resistance: 45mOhm
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Vgs (Max): ±8V
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Rise Time: 9.8 ns
  • Power Dissipation-Max: 800mW Ta
  • Current - Continuous Drain (Id) @ 25°C: 4.2A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 594.3pF @ 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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