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- Manufacturer No：DMN30H4D0LFDE-7
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：DMN30H4D0LFDE-7
- SKU：1794034
- Description：Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 550mA Ta 550mA 630mW Ta 300V
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DMN30H4D0LFDE-7 Details
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 550mA Ta 550mA 630mW Ta 300V
DMN30H4D0LFDE-7 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- Drain to Source Voltage (Vdss): 300V
- Published: 2014
- Factory Lead Time: 22 Weeks
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 550mA
- Vgs(th) (Max) @ Id: 2.8V @ 250μA
- Power Dissipation-Max: 630mW Ta
- Rds On (Max) @ Id, Vgs: 4 Ω @ 300mA, 10V
- Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- JESD-609 Code: e4
- Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Vgs (Max): ±20V
- Package / Case: 6-UDFN Exposed Pad
- Drive Voltage (Max Rds On,Min Rds On): 2.7V 10V
- Current - Continuous Drain (Id) @ 25°C: 550mA Ta
- Input Capacitance (Ciss) (Max) @ Vds: 187.3pF @ 25V
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Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
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