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ZXM62P03E6TA123
Inventory:8725
  • Qty Unit Price price
  • 1 $0.628 $0.628
  • 10 $0.621 $6.21
  • 100 $0.614 $61.4
  • 1000 $0.607 $607
  • 10000 $0.6 $6000

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ZXM62P03E6TA
  • Manufacturer No:
    ZXM62P03E6TA
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    ZXM62P03E6TA
  • SKU:
    1821714
  • Description:
    Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-23 T/R

ZXM62P03E6TA Details

Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-23 T/R

ZXM62P03E6TA Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 6
  • Pin Count: 6
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • DS Breakdown Voltage-Min: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Width: 1.8mm
  • Package / Case: SOT-23-6
  • FET Type: P-Channel
  • Voltage - Rated DC: -30V
  • Fall Time (Typ): 6.4 ns
  • Turn On Delay Time: 2.8 ns
  • Current - Continuous Drain (Id) @ 25°C: 1.5A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
  • Turn-Off Delay Time: 13.9 ns
  • Current Rating: -1.6A
  • Rds On (Max) @ Id, Vgs: 150m Ω @ 1.6A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Gate to Source Voltage (Vgs): 12V
  • Published: 2006
  • Factory Lead Time: 17 Weeks
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (ID): 1.5A
  • Height: 1.3mm
  • Operating Mode: ENHANCEMENT MODE
  • Length: 3.1mm
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Resistance: 150mOhm
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Rise Time: 6.4 ns
  • Additional Feature: LOW THRESHOLD
  • Power Dissipation-Max: 625mW Ta
  • Weight: 14.996898mg
  • Power Dissipation: 806mW
  • Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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