Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:17616
- Qty Unit Price price
- 1 $1.011 $1.011
- 10 $1 $10
- 100 $0.99 $99
- 1000 $0.98 $980
- 10000 $0.97 $9700
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：ZXMN6A25GTA
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：ZXMN6A25GTA
- SKU：1823632
- Description：MOSFET N-Chan 60V MOSFET (UMOS)
User Guide
User Guide
ZXMN6A25GTA Details
MOSFET N-Chan 60V MOSFET (UMOS)
ZXMN6A25GTA Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Pins: 4
- Pin Count: 4
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Length: 6.7mm
- Rise Time: 4 ns
- Power Dissipation: 3.9W
- Weight: 7.994566mg
- Turn On Delay Time: 3.8 ns
- Fall Time (Typ): 10.6 ns
- Current - Continuous Drain (Id) @ 25°C: 4.8A Ta
- Turn-Off Delay Time: 26.2 ns
- Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 4
- Pbfree Code: no
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 60V
- Published: 2006
- Factory Lead Time: 17 Weeks
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Height: 1.65mm
- Resistance: 50mOhm
- Width: 3.7mm
- Package / Case: TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id: 1V @ 250μA
- Continuous Drain Current (ID): 6.7A
- Power Dissipation-Max: 2W Ta
- Pulsed Drain Current-Max (IDM): 28.5A
- Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
- Rds On (Max) @ Id, Vgs: 50m Ω @ 3.6A, 10V
Search for similar products
ZXMN6A25GTA Similar Products
The four parts on the right have similar specifications to Diodes Incorporated & ZXMN6A25GTA
Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
