IRFD320
Vishay Siliconix
Moisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Channels
1Radiation Hardening
NoRoHS Status
Non-RoHS CompliantMin Operating Temperature
-55°CPart Status
ObsoleteNumber of Pins
4Packaging
TubePublished
2016Max Operating Temperature
150°CDrive Voltage (Max Rds On,Min Rds On)
10VLength
5mmGate to Source Voltage (Vgs)
20VDrain to Source Voltage (Vdss)
400VDrain to Source Breakdown Voltage
400VOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Vgs (Max)
±20VTurn On Delay Time
10 nsVgs(th) (Max) @ Id
4V @ 250μATurn-Off Delay Time
30 nsDrain to Source Resistance
1.8OhmFall Time (Typ)
14 nsContinuous Drain Current (ID)
490mAPackage / Case
4-DIP (0.300, 7.62mm)Rise Time
14nsGate Charge (Qg) (Max) @ Vgs
20nC @ 10VPower Dissipation-Max
1W TaHeight
3.37mmRds On Max
1.8 ΩWidth
6.29mmSupplier Device Package
4-DIP, Hexdip, HVMDIPInput Capacitance (Ciss) (Max) @ Vds
410pF @ 25VInput Capacitance
410pFRds On (Max) @ Id, Vgs
1.8Ohm @ 210mA, 10VCurrent - Continuous Drain (Id) @ 25°C
490mA Ta