IRFBF20STRLPBF
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Channels
1Radiation Hardening
NoLead Free
Lead FreeMin Operating Temperature
-55°CFactory Lead Time
8 WeeksNumber of Pins
3Published
2013Max Operating Temperature
150°CREACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleGate to Source Voltage (Vgs)
20VOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Height
4.83mmVgs (Max)
±20VPackage / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263ABResistance
8OhmDrain to Source Resistance
8OhmVgs(th) (Max) @ Id
4V @ 250μAContinuous Drain Current (ID)
1.7ATurn On Delay Time
8 nsInput Capacitance
2.2nFLength
10.67mmDrain to Source Voltage (Vdss)
900VDrain to Source Breakdown Voltage
900VWidth
9.65mmFall Time (Typ)
32 nsNominal Vgs
2 VSupplier Device Package
D2PAKWeight
1.437803gPower Dissipation
3.1WTurn-Off Delay Time
56 nsGate Charge (Qg) (Max) @ Vgs
38nC @ 10VRise Time
21nsInput Capacitance (Ciss) (Max) @ Vds
490pF @ 25VCurrent - Continuous Drain (Id) @ 25°C
1.7A TcRds On Max
9.5 mΩRds On (Max) @ Id, Vgs
8Ohm @ 1A, 10VPower Dissipation-Max
3.1W Ta 54W Tc