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- Manufacturer No：IRF610SPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF610SPBF
- SKU：146194
- Description：MOSFET N-CH 200V 3.3A D2PAK
User Guide
User Guide
IRF610SPBF Details
MOSFET N-CH 200V 3.3A D2PAK
IRF610SPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Dual Supply Voltage: 200V
- REACH SVHC: Unknown
- Element Configuration: Single
- Power Dissipation: 3W
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Threshold Voltage: 4V
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Resistance: 1.5Ohm
- Length: 10.67mm
- Continuous Drain Current (ID): 3.3A
- Supplier Device Package: D2PAK
- Weight: 1.437803g
- Rds On Max: 1.5 Ω
- Input Capacitance: 140pF
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 3.3A Tc
- Power Dissipation-Max: 3W Ta 36W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Published: 2004
- FET Type: N-Channel
- Height: 4.83mm
- Vgs (Max): ±20V
- Resistance: 1.5Ohm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 9.65mm
- Turn-Off Delay Time: 14 ns
- Nominal Vgs: 4 V
- Rise Time: 17ns
- Turn On Delay Time: 8.2 ns
- Fall Time (Typ): 8.9 ns
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
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