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  • Manufacturer No:
    IRF9640STRLPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    188336
  • Description:
    MOSFET P-CH 200V 11A D2PAK
  • Quantity:
      • RFQ
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Inventory:4284
  • Qty Unit Price price
  • 1 $386.067 $386.067
  • 10 $382.244 $3822.44
  • 100 $378.459 $37845.9
  • 1000 $374.711 $374711
  • 10000 $371 $3710000

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  • Manufacturer No:
    IRF9640STRLPBF
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF9640STRLPBF
  • SKU:
    188336
  • Description:
    MOSFET P-CH 200V 11A D2PAK

IRF9640STRLPBF Details

MOSFET P-CH 200V 11A D2PAK

IRF9640STRLPBF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Number of Pins: 3
  • Drain to Source Voltage (Vdss): 200V
  • Max Operating Temperature: 150°C
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Power Dissipation: 3W
  • Technology: MOSFET (Metal Oxide)
  • Threshold Voltage: 4V
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Resistance: 500mOhm
  • Length: 10.67mm
  • Turn On Delay Time: 14 ns
  • Supplier Device Package: D2PAK
  • Fall Time (Typ): 38 ns
  • Rds On Max: 500 mΩ
  • Drain to Source Breakdown Voltage: -200V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Rise Time: 43ns
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Lead Free: Lead Free
  • Factory Lead Time: 8 Weeks
  • Termination: SMD/SMT
  • Dual Supply Voltage: 200V
  • Published: 2014
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Height: 4.83mm
  • Vgs (Max): ±20V
  • FET Type: P-Channel
  • Continuous Drain Current (ID): 11A
  • Drain to Source Resistance: 500mOhm
  • Width: 9.65mm
  • Input Capacitance: 1.2nF
  • Nominal Vgs: 4 V
  • Turn-Off Delay Time: 39 ns
  • Current - Continuous Drain (Id) @ 25°C: 11A Tc
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Weight: 1.946308g
  • Power Dissipation-Max: 3W Ta 125W Tc

Excellent

Based on reviews

Excellent

Based on reviews

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