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- Manufacturer No：IRFD120PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD120PBF
- SKU：189634
- Description：MOSFET N-CH 100V 1.3A 4-DIP
User Guide
User Guide
IRFD120PBF Details
MOSFET N-CH 100V 1.3A 4-DIP
IRFD120PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Terminations: 4
- Factory Lead Time: 8 Weeks
- Voltage - Rated DC: 100V
- Published: 2011
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Case Connection: DRAIN
- Continuous Drain Current (ID): 1.3A
- Power Dissipation: 1.3W
- Turn-Off Delay Time: 18 ns
- Fall Time (Typ): 27 ns
- Subcategory: FET General Purpose Powers
- Turn On Delay Time: 6.8 ns
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Height: 3.37mm
- Width: 6.29mm
- Rds On (Max) @ Id, Vgs: 270m Ω @ 780mA, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Pins: 4
- Pin Count: 4
- Packaging: Tube
- Drain to Source Breakdown Voltage: 100V
- REACH SVHC: Unknown
- Transistor Element Material: SILICON
- Length: 5mm
- FET Type: N-Channel
- Threshold Voltage: 4V
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Current Rating: 1.3A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Additional Feature: AVALANCHE RATED
- Resistance: 270mOhm
- Rise Time: 27 ns
- Package / Case: 4-DIP (0.300, 7.62mm)
- Recovery Time: 260 ns
- Power Dissipation-Max: 1.3W Ta
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 1.3A Ta
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