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- Manufacturer No：IRFL9110TRPBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFL9110TRPBF
- SKU：189649
- Description：MOSFET P-CH 100V 1.1A SOT223
User Guide
User Guide
IRFL9110TRPBF Details
MOSFET P-CH 100V 1.1A SOT223
IRFL9110TRPBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Factory Lead Time: 8 Weeks
- Published: 2011
- Max Junction Temperature (Tj): 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Height: 1.8mm
- Turn-Off Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Width: 3.7mm
- Drain to Source Resistance: 1.2Ohm
- Input Capacitance: 200pF
- Supplier Device Package: SOT-223
- Threshold Voltage: -4V
- Rds On Max: 1.2 Ω
- Weight: 250.212891mg
- Power Dissipation-Max: 2W Ta 3.1W Tc
- Current - Continuous Drain (Id) @ 25°C: 1.1A Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Number of Pins: 4
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Power Dissipation: 2W
- Operating Temperature: -55°C~150°C TJ
- Vgs (Max): ±20V
- Turn On Delay Time: 10 ns
- FET Type: P-Channel
- Length: 6.7mm
- Resistance: 1.2Ohm
- Package / Case: TO-261-4, TO-261AA
- Fall Time (Typ): 17 ns
- Drain to Source Breakdown Voltage: -100V
- Rise Time: 27ns
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
- Continuous Drain Current (ID): -1.1A
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
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