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- Manufacturer No：IRF820A
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF820A
- SKU：191807
- Description：MOSFET N-CH 500V 2.5A TO-220AB
User Guide
User Guide
IRF820A Details
MOSFET N-CH 500V 2.5A TO-220AB
IRF820A Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 500V
- Power Dissipation: 50W
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs (Max): ±30V
- Rise Time: 12ns
- Length: 10.41mm
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Turn On Delay Time: 8.1 ns
- Current - Continuous Drain (Id) @ 25°C: 2.5A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2011
- REACH SVHC: Unknown
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 30V
- Threshold Voltage: 4.5V
- FET Type: N-Channel
- Continuous Drain Current (ID): 2.5A
- Width: 4.7mm
- Drain to Source Resistance: 3Ohm
- Fall Time (Typ): 13 ns
- Turn-Off Delay Time: 16 ns
- Weight: 6.000006g
- Power Dissipation-Max: 50W Tc
- Rds On Max: 3 Ω
- Height: 9.01mm
- Nominal Vgs: 4.5 V
- Input Capacitance: 340pF
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