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- Manufacturer No：IRFBC40
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFBC40
- SKU：196582
- Description：MOSFET N-CH 600V 6.2A TO-220AB
User Guide
User Guide
IRFBC40 Details
MOSFET N-CH 600V 6.2A TO-220AB
IRFBC40 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 600V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 13 ns
- Length: 10.41mm
- Power Dissipation: 125W
- Input Capacitance: 1.3nF
- Power Dissipation-Max: 125W Tc
- Height: 9.01mm
- Rds On Max: 1.2 Ω
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Drain to Source Voltage (Vdss): 600V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Width: 4.7mm
- Fall Time (Typ): 20 ns
- Drain to Source Resistance: 1.2Ohm
- Turn-Off Delay Time: 55 ns
- Continuous Drain Current (ID): 6.2A
- Weight: 6.000006g
- Rise Time: 18ns
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 6.2A Tc
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