IRFD120
Vishay Siliconix
Moisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleTermination
Through HoleNumber of Elements
1Radiation Hardening
NoRoHS Status
Non-RoHS CompliantMin Operating Temperature
-55°CPart Status
ObsoleteNumber of Pins
4Packaging
TubeLead Pitch
2.54mmDrain to Source Voltage (Vdss)
100VDrain to Source Breakdown Voltage
100VPublished
2015Max Operating Temperature
175°CDrive Voltage (Max Rds On,Min Rds On)
10VGate to Source Voltage (Vgs)
20VFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Operating Temperature
-55°C~175°C TJVgs (Max)
±20VCurrent Rating
1.3AContinuous Drain Current (ID)
1.3AVgs(th) (Max) @ Id
4V @ 250μAPower Dissipation
1.3WTurn-Off Delay Time
18 nsInput Capacitance
360pFRow Spacing
7.62 mmDrain to Source Resistance
270mOhmFall Time (Typ)
27 nsPackage / Case
4-DIP (0.300, 7.62mm)Turn On Delay Time
6.8 nsRise Time
27nsGate Charge (Qg) (Max) @ Vgs
16nC @ 10VPower Dissipation-Max
1.3W TaInput Capacitance (Ciss) (Max) @ Vds
360pF @ 25VSupplier Device Package
4-DIP, Hexdip, HVMDIPRds On Max
270 mΩCurrent - Continuous Drain (Id) @ 25°C
1.3A TaRds On (Max) @ Id, Vgs
270mOhm @ 780mA, 10V