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- Manufacturer No：IRF9630PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF9630PBF
- SKU：219164
- Description：Single P-Channel 200 V 0.8 Ohm Flange Mount Power Mosfet - TO-220AB
User Guide
User Guide
IRF9630PBF Details
Single P-Channel 200 V 0.8 Ohm Flange Mount Power Mosfet - TO-220AB
IRF9630PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2012
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- FET Type: P-Channel
- Turn On Delay Time: 12 ns
- Drain to Source Resistance: 800mOhm
- Length: 10.41mm
- Turn-Off Delay Time: 28 ns
- Rds On Max: 800 mΩ
- Rise Time: 27ns
- Drain to Source Breakdown Voltage: -200V
- Power Dissipation: 74W
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Nominal Vgs: -4 V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
- Continuous Drain Current (ID): -6.5A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 200V
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Threshold Voltage: 4V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Resistance: 800mOhm
- Recovery Time: 300 ns
- Fall Time (Typ): 24 ns
- Weight: 6.000006g
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Height: 9.01mm
- Voltage - Rated DC: -200V
- Input Capacitance: 700pF
- Power Dissipation-Max: 74W Tc
- Current - Continuous Drain (Id) @ 25°C: 6.5A Tc
- Current Rating: -6.5A
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