SI3460DV-T1-E3Vishay Siliconix
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    • Manufacturer No：
      SI3460DV-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      224553
    • Description：
      Trans MOSFET N-CH 20V 5.1A 6-Pin TSOP T/R
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    • Manufacturer No：
      SI3460DV-T1-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI3460DV-T1-E3
    • SKU：
      224553
    • Description：
      Trans MOSFET N-CH 20V 5.1A 6-Pin TSOP T/R

    User Guide

    User Guide

    SI3460DV-T1-E3 Details

    Trans MOSFET N-CH 20V 5.1A 6-Pin TSOP T/R

    SI3460DV-T1-E3 Specification Parameters

    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Part Status: Obsolete
    • Number of Terminations: 6
    • Pin Count: 6
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Transistor Element Material: SILICON
    • Drain to Source Breakdown Voltage: 20V
    • FET Type: N-Channel
    • Operating Mode: ENHANCEMENT MODE
    • Height: 990.6μm
    • Width: 1.65mm
    • Turn On Delay Time: 15 ns
    • Rise Time: 30 ns
    • Package / Case: SOT-23-6 Thin, TSOT-23-6
    • Power Dissipation: 1.1W
    • Resistance: 27mOhm
    • Continuous Drain Current (ID): 6.8A
    • Power Dissipation-Max: 1.1W Ta
    • Current - Continuous Drain (Id) @ 25°C: 5.1A Ta
    • Rds On (Max) @ Id, Vgs: 27m Ω @ 5.1A, 4.5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Terminal Position: DUAL
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Terminal Finish: Matte Tin (Sn)
    • Published: 2009
    • Element Configuration: Single
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Gate to Source Voltage (Vgs): 8V
    • Subcategory: FET General Purpose Power
    • Length: 3.05mm
    • Fall Time (Typ): 30 ns
    • Turn-Off Delay Time: 70 ns
    • Series: TrenchFET?
    • Vgs (Max): ±8V
    • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
    • Weight: 19.986414mg
    • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
    • Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
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