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- Manufacturer No：SI3459DV-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI3459DV-T1-E3
- SKU：226264
- Description：MOSFET P-CH 60V 2.2A 6-TSOP
User Guide
User Guide
SI3459DV-T1-E3 Details
MOSFET P-CH 60V 2.2A 6-TSOP
SI3459DV-T1-E3 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Published: 2016
- Drain to Source Voltage (Vdss): 60V
- Element Configuration: Single
- Height: 1mm
- Operating Temperature: -55°C~150°C TJ
- Vgs (Max): ±20V
- Length: 3.05mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Fall Time (Typ): 12 ns
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Resistance: 220mOhm
- Series: TrenchFET?
- Drain to Source Breakdown Voltage: -60V
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Supplier Device Package: 6-TSOP
- Vgs(th) (Max) @ Id: 1V @ 250μA (Min)
- Rds On (Max) @ Id, Vgs: 220mOhm @ 2.2A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 6
- Max Operating Temperature: 150°C
- Power Dissipation: 2W
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Width: 1.65mm
- Continuous Drain Current (ID): 2.2A
- FET Type: P-Channel
- Turn On Delay Time: 8 ns
- Rise Time: 12ns
- Drain to Source Resistance: 220mOhm
- Turn-Off Delay Time: 23 ns
- Power Dissipation-Max: 2W Ta
- Weight: 19.986414mg
- Rds On Max: 220 mΩ
- Current - Continuous Drain (Id) @ 25°C: 2.2A Tc
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