SI4634DY-T1-GE3Vishay Siliconix
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    SI4634DY-T1-GE3123
    • Manufacturer No：
      SI4634DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      227763
    • Description：
      MOSFET 30V 24.5A 5.7W 5.2mohm @ 10V
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    • Qty Unit Price price
    • 1 $1112.866 $1112.866
    • 10 $1101.847 $11018.47
    • 100 $1090.937 $109093.7
    • 1000 $1080.135 $1080135
    • 10000 $1069.4404 $10694404

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    SI4634DY-T1-GE3
    • Manufacturer No：
      SI4634DY-T1-GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SI4634DY-T1-GE3
    • SKU：
      227763
    • Description：
      MOSFET 30V 24.5A 5.7W 5.2mohm @ 10V

    User Guide

    User Guide

    SI4634DY-T1-GE3 Details

    MOSFET 30V 24.5A 5.7W 5.2mohm @ 10V

    SI4634DY-T1-GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Number of Pins: 8
    • Pin Count: 8
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Factory Lead Time: 14 Weeks
    • Transistor Element Material: SILICON
    • Length: 5mm
    • Drain to Source Voltage (Vdss): 30V
    • Width: 4mm
    • Package / Case: 8-SOIC (0.154, 3.90mm Width)
    • Technology: MOSFET (Metal Oxide)
    • Operating Mode: ENHANCEMENT MODE
    • Vgs (Max): ±20V
    • Power Dissipation: 2.5W
    • Threshold Voltage: 2.6V
    • Pulsed Drain Current-Max (IDM): 70A
    • Series: TrenchFET?
    • Weight: 186.993455mg
    • Avalanche Energy Rating (Eas): 45 mJ
    • Vgs(th) (Max) @ Id: 2.6V @ 250μA
    • Power Dissipation-Max: 2.5W Ta 5.7W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Number of Terminations: 8
    • Terminal Position: DUAL
    • Published: 2012
    • Time@Peak Reflow Temperature-Max (s): 40
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 20V
    • DS Breakdown Voltage-Min: 30V
    • Operating Temperature: -55°C~150°C TJ
    • FET Type: N-Channel
    • Transistor Application: SWITCHING
    • Height: 1.5mm
    • Rise Time: 10 ns
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Fall Time (Typ): 8 ns
    • Turn On Delay Time: 14 ns
    • Turn-Off Delay Time: 33 ns
    • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
    • Drain-source On Resistance-Max: 0.0052Ohm
    • Continuous Drain Current (ID): 24.5A
    • Rds On (Max) @ Id, Vgs: 5.2m Ω @ 15A, 10V
    • Current - Continuous Drain (Id) @ 25°C: 24.5A Tc
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