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- Manufacturer No：SI1416EDH-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SI1416EDH-T1-GE3
- SKU：234495
- Description：Trans MOSFET N-CH 30V 3.9A 6-Pin SC-70 T/R
User Guide
User Guide
SI1416EDH-T1-GE3 Details
Trans MOSFET N-CH 30V 3.9A 6-Pin SC-70 T/R
SI1416EDH-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Gate to Source Voltage (Vgs): 12V
- Published: 2014
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 20 ns
- Width: 1.35mm
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Continuous Drain Current (ID): 3.9A
- Vgs (Max): ±12V
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250μA
- Drain-source On Resistance-Max: 0.058Ohm
- Power Dissipation-Max: 2.8W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 6
- Pin Count: 6
- Reach Compliance Code: unknown
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Height: 1mm
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Turn-Off Delay Time: 25 ns
- Length: 2.2mm
- Rise Time: 60 ns
- Fall Time (Typ): 45 ns
- Series: TrenchFET?
- Power Dissipation: 1.56W
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 10V
- Weight: 28.009329mg
- Current - Continuous Drain (Id) @ 25°C: 3.9A Tc
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