SI1469DH-T1-E3
Vishay Siliconix
Part Status
ActiveRoHS Status
ROHS3 CompliantMoisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Surface MountMount
Surface MountPackaging
Tape & Reel (TR)Number of Elements
1Number of Channels
1ECCN Code
EAR99Pbfree Code
yesRadiation Hardening
NoJESD-609 Code
e3Lead Free
Lead FreeTerminal Position
DUALNumber of Terminations
6Number of Pins
6Pin Count
6Terminal Form
GULL WINGPeak Reflow Temperature (Cel)
260Terminal Finish
Matte Tin (Sn)Gate to Source Voltage (Vgs)
12VTime@Peak Reflow Temperature-Max (s)
40Factory Lead Time
14 WeeksLength
2mmPublished
2014REACH SVHC
UnknownTransistor Element Material
SILICONElement Configuration
SingleHeight
1mmDrain to Source Voltage (Vdss)
20VWidth
1.25mmOperating Temperature
-55°C~150°C TJPulsed Drain Current-Max (IDM)
8ATechnology
MOSFET (Metal Oxide)Transistor Application
SWITCHINGPower Dissipation
1.5WOperating Mode
ENHANCEMENT MODESubcategory
Other TransistorsContinuous Drain Current (ID)
1.6ARise Time
20 nsFET Type
P-ChannelDrain Current-Max (Abs) (ID)
3.2ATurn On Delay Time
5 nsPackage / Case
6-TSSOP, SC-88, SOT-363Fall Time (Typ)
9 nsResistance
80mOhmDrain to Source Breakdown Voltage
-20VTurn-Off Delay Time
22 nsSeries
TrenchFET?Vgs (Max)
±12VVgs(th) (Max) @ Id
1.5V @ 250μAThreshold Voltage
-1.5VDrive Voltage (Max Rds On,Min Rds On)
2.5V 10VWeight
7.512624mgCurrent - Continuous Drain (Id) @ 25°C
2.7A TcGate Charge (Qg) (Max) @ Vgs
8.5nC @ 4.5VInput Capacitance (Ciss) (Max) @ Vds
470pF @ 10VRds On (Max) @ Id, Vgs
80m Ω @ 2A, 10VPower Dissipation-Max
1.5W Ta 2.78W Tc